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TIP112G Anwendungshinweis - ON Semiconductor

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TIP112G Anwendungshinweis

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© Semiconductor Components Industries, LLC, 2011
September, 2011 Rev. 7
1 Publication Order Number:
TIP110/D
TIP110, TIP111, TIP112
(NPN); TIP115, TIP116,
TIP117 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
Designed for generalpurpose amplifier and lowspeed switching
applications.
Features
High DC Current Gain
h
FE
= 2500 (Typ) @ I
C
= 1.0 Adc
CollectorEmitter Sustaining Voltage @ 30 mAdc
V
CEO(sus)
= 60 Vdc (Min) TIP110, TIP115
= 80 Vdc (Min) TIP111, TIP116
= 100 Vdc (Min) TIP112, TIP117
Low CollectorEmitter Saturation Voltage
V
CE(sat)
= 2.5 Vdc (Max) @ I
C
= 2.0 Adc
Monolithic Construction with Builtin BaseEmitter Shunt Resistors
PbFree Packages are Available*
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO220AB
CASE 221A
STYLE 1
MARKING
DIAGRAM
DARLINGTON
2 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
6080100 VOLTS, 50 WATTS
http://onsemi.com
1
2
3
4
TIP11x = Device Code
x = 0, 1, 2, 5, 6, or 7
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
TIP11xG
AYWW
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
Verzeichnis

TIP112G Datenblatt-PDF

TIP112G Datenblatt PDF
ON Semiconductor
6 Seiten, 246 KB
TIP112G Anderes Datenblatt
ON Semiconductor
9 Seiten, 293 KB
TIP112G Anwendungshinweis
ON Semiconductor
8 Seiten, 133 KB
TIP112G Notizdatei
ON Semiconductor
5 Seiten, 159 KB

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