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A4
VCC
A0
A3
A1
A2
A5
A6
A7
A9
A10
A11
VCC
A8
C4
B5
B2
C2
B4
B3
C3
C5
VCC
B6
C6
B7
B8
C8
B9
C9
C7
GND
EN
SEL2
SEL1
C11
B11
C10
B10
C0
B0
C1
B1
1
2
3
4
5
6
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4142
TS3DDR3812
www.ti.com
SCDS314B –FEBRUARY 2011–REVISED MAY 2013
12-Channel, 1:2 MUX/DEMUX Switch for DDR3 Applications
Check for Samples: TS3DDR3812
1
FEATURES
APPLICATIONS
• Compatible with DDR3 SDRAM Standard • DDR3 Signal Switching
(JESD79-3D)
• DIMM Modules
• Wide Bandwidth of 1.675 GHz
• Notebook/Desktop PCs
• Low Propagation Delay (t
pd
= 40 ps Typ)
• Servers
• Low Bit-to-Bit Skew (t
sk(o)
= 6 ps Typ)
Figure 1. RUA PACKAGE
• Low and Flat ON-State Resistance
(TOP VIEW)
(r
ON
= 8 Ω Typ)
• Low Input/Output Capacitance
(C
ON
= 5.6 pF Typ)
• Low Crosstalk (X
TALK
= –43 dB,
Typ at 250 MHz)
• V
CC
Operating Range from 3 V to 3.6 V
• Rail-to-Rail Switching on Data I/O Ports
(0 to V
CC
)
• Separate Switch Control Logic for Upper and
Lower 6-Channels
• Dedicated Enable Logic Supports Hi-Z Mode
• I
OFF
Protection Prevents Current Leakage in
Powered Down State (V
CC
= 0 V)
• ESD Performance Tested Per JESD22
– 2000 V Human Body Model
(A114B, Class II)
– 1000 V Charged Device Model (C101)
• 42-pin RUA Package (9 × 3.5 mm, 0.5 mm
Pitch)
DESCRIPTION
The TS3DDR3812 is a 12-channel, 1:2 multiplexer/demultiplexer switch designed for DDR3 applications. It
operates from a 3 to 3.6 V supply and offers low and flat ON-state resistance as well as low I/O capacitance
which allow it to achieve a typical bandwidth of 1.675 GHz.
Channels A
0
through A
11
are divided into two banks of six bits and are independently controlled via two digital
inputs called SEL1 and SEL2. These select inputs control the switch position of each 6-bit DDR3 source and
allow them to be routed to one of two end-points. Alternatively, the switch can be used to connect a single
endpoint to one of two 6-bit DDR3 sources. For switching 12-bit DDR3 sources, simply connect SEL1 and SEL2
together externally and control all 12 channels with a single GPIO input. An EN input allows the entire chip to be
placed into a high-impedance (Hi-Z) state while not in use.
These characteristics make the TS3DDR3812 an excellent choice for use in memory, analog/digital video, LAN,
and other high-speed signal switching applications.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2011–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Verzeichnis
- ・ Konfiguration des Pinbelegungsdiagramms on Seite 2 Seite 3
- ・ Abmessungen des Paketumrisses on Seite 13 Seite 15 Seite 16
- ・ Teilenummerierungssystem on Seite 2
- ・ Markierungsinformationen on Seite 13
- ・ Typisches Anwendungsschaltbild on Seite 2
- ・ Technische Daten on Seite 3
- ・ Anwendungsbereich on Seite 1 Seite 20
- ・ Elektrische Spezifikation on Seite 4
