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Issue 3 - March 2008 1 www.zetex.com
© Zetex Semiconductors plc 2008
ZXTN25012EFH
12V, SOT23, NPN medium power transistor
Summary
BV
CEO
> 12V
BV
ECX
> 6V
h
FE
> 500
I
C(cont)
= 6A
V
CE(sat)
< 32mV @ 1A
R
CE(sat)
= 23m⍀
P
D
= 1.25W
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
• High power dissipation SOT23 package
• High peak current
• Very high gain
• Low saturation voltage
• 6V reverse blocking voltage
Applications
• MOSFET gate drivers
• Power switches
• Motor control
•DC fans
• DC-DC converters
Ordering information
Device marking
1C3
Device Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXTN25012EFHTA 7 8 3,000
C
E
B
C
E
B
Pinout - top view
Verzeichnis
