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LM4125
www.ti.com
SNVS238A –MAY 2004–REVISED APRIL 2013
LM4125 Precision Micropower Low Dropout Voltage Reference
Check for Samples: LM4125
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FEATURES
DESCRIPTION
The LM4125 is a precision low power low dropout
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• Small SOT23-5 Package
bandgap voltage reference with up to 5 mA output
• Low Dropout Voltage: 120 mV Typ @ 1 mA
current source and sink capability.
• High Output Voltage Accuracy: 0.2%
This series reference operates with input voltages as
• Source and Sink Current Output: ±5 mA
low as 2V and up to 6V consuming 160 µA (Typ.)
• Supply Current: 160 μA Typ.
supply current. In power down mode, device current
drops to less than 2 μA.
• Low Temperature Coefficient: 50 ppm/°C
The LM4125 comes in two grades (A and Standard)
• Fixed Output Voltages: 2.048, 2.5,and 4.096
and three voltage options for greater flexibility. The
• Industrial Temperature Range: −40°C to +85°C
best grade devices (A) have an initial accuracy of
• (For Extended Temperature Range, −40°C to
0.2%, while the standard have an initial accuracy of
125°C, Contact TI)
0.5%, both with a tempco of 50ppm/°C ensured from
−40°C to +125°C.
APPLICATIONS
The very low dropout voltage, low supply current and
• Portable, Battery Powered Equipment
power-down capability of the LM4125 makes this
product an ideal choice for battery powered and
• Instrumentation and Process Control
portable applications.
• Automotive & Industrial
The device performance is ensured over the industrial
• Test Equipment
temperature range (−40°C to +85°C), while certain
• Data Acquisition Systems
specs are ensured over the extended temperature
• Precision Regulators
range (−40°C to +125°C). Please contact TI for full
specifications over the extended temperature range.
• Battery Chargers
The LM4125 is available in a standard 5-pin SOT-23
• Base Stations
package.
• Communications
• Medical Equipment
Connection Diagram
Figure 1. 5-Pin SOT-23 Surface Mount Package
See Package Number DBV
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 2004–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Verzeichnis
- ・ Konfiguration des Pinbelegungsdiagramms on Seite 8
- ・ Abmessungen des Paketumrisses on Seite 12 Seite 14 Seite 15
- ・ Markierungsinformationen on Seite 12
- ・ Typisches Anwendungsschaltbild on Seite 9
- ・ Technische Daten on Seite 2
- ・ Anwendungsbereich on Seite 1 Seite 18
- ・ Elektrische Spezifikation on Seite 2 Seite 3 Seite 4
