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October 2010 Doc ID 16211 Rev 2 1/30
PM0063
Programming manual
STM32F100xx
value line Flash programming
Introduction
This programming manual describes how to program the Flash memory of low-density
(STM32F100x4, STM32F100x6), medium-density STM32F100xx (STM32F100x8,
STM32F100xB) and high-density (STM32F100xC, STM32F100xD, STM32F100xE)
microcontrollers. For convenience, these will be referred to as STM32F100xx in the rest of
this document unless otherwise specified.
The STM32F100xx embedded Flash memory can be programmed using in-circuit
programming or in-application programming.
The in-circuit programming (ICP) method is used to update the entire contents of the
Flash memory, using the JTAG, SWD protocol or the boot loader to load the user application
into the microcontroller. ICP offers quick and efficient design iterations and eliminates
unnecessary package handling or socketing of devices.
In contrast to the ICP method, in-application programming (IAP) can use any
communication interface supported by the microcontroller (I/Os, UART, I
2
C, SPI, etc.) to
download programming data into memory. IAP allows the user to re-program the Flash
memory while the application is running. Nevertheless, part of the application has to have
been previously programmed in the Flash memory using ICP.
The Flash interface implements instruction access and data access based on the AHB
protocol. It implements the logic necessary to carry out Flash memory operations
(Program/Erase). Program/Erase operations can be performed over the whole product
voltage range. Read/Write protections and option bytes are also implemented.
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