MJ11032G Datenblatt-PDF - ON Semiconductor

MJ11032G Datenblatt PDF

ON Semiconductor

6 Seiten, 188 KB

MJ11032G Anderes Datenblatt

ON Semiconductor

5 Seiten, 117 KB

MJ11032G Produktkatalog

ON Semiconductor

4 Seiten, 63 KB

MJ11032G Andere Referenzen

ON Semiconductor

1 Seiten, 140 KB

MJ11032
Datenblatt PDF

Multicomp

Bipolar (BJT) Single Transistor, Darlington, NPN, 120V, 300W, 50A, 1000 hFE

MJ11032
Datenblatt PDF

ON Semiconductor

TO-204-2/TO-3-2 NPN 120V 50A

MJ11032
Datenblatt PDF

Semelab

SEMELAB MJ11032 Bipolar (BJT) Single Transistor, Darlington, NPN, 120V, 300W, 50A, 1000 hFE

MJ11032
Datenblatt PDF

Motorola

TRANS NPN DARL 120V 50A TO3

MJ11032
Datenblatt PDF

NTE Electronics

NTE ELECTRONICS MJ11032 On Semiconductor Transistor, IC Max: 50A, VCEO(sus) Min: 120V, Forward Current Transfer Ratio Min: 400, PTM Max: 300W, Type:

MJ11032
Datenblatt PDF

Mospec

Trans Darlington NPN 120V 50A 300000mW 3Pin(2+Tab) TO-3

MJ11032
Datenblatt PDF

Solid State Devices

Power Bipolar Transistor, 50A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

MJ11032
Datenblatt PDF

Advanced Semiconductor

Power Bipolar Transistor, 50A I(C), 1-Element, NPN, Silicon, Metal, 2 Pin, MODIFIED TO-3, 2 PIN

MJ11032
Datenblatt PDF

New Jersey Semiconductor

Trans Darlington NPN 120V 50A 3Pin(2+Tab) TO-204 Tray

MJ11032
Datenblatt PDF

Inchange Semiconductor

Transistor