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A1366LKTTN-1-T
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A1366LKTTN-1-T Programmierhandbuch - Allegro MicroSystems

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A1366LKTTN-1-T Programmierhandbuch

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Description
The Allegro™ A1366 factory-programmable linear Hall-
effect current sensor IC has been designed to achieve high
accuracy and resolution. The goal is achieved through new
proprietary linearly interpolated temperature compensation
technology that is programmed at the Allegro factory, which
provides sensitivity and offset that are virtually flat across
the full operating temperature range. The flat performance
over temperature makes this IC ideally suited for current
sensing applications. Temperature compensation is done in
the digital domain with integrated EEPROM technology
without sacrificing the analog signal path bandwidth, making
this device ideal for HEV inverter, DC-to-DC converter, and
electric power steering (EPS) applications.
This ratiometric Hall-effect sensor IC provides a voltage output
that is proportional to the applied magnetic field. Sensitivity and
quiescent (zero field) output voltage are factory programmed
with high resolution which provides for an accuracy of less
than ±1%, typical, over temperature.
The sensor IC incorporates a highly sensitive Hall element with
a BiCMOS interface integrated circuit that employs a low noise,
small-signal high-gain amplifier, as well as a low-impedance
output stage, and a proprietary, high bandwidth dynamic offset
A1366-DS
Features and Benefits
Factory programmed sensitivity and quiescent output
voltage with high resolution
Proprietary segmented linear interpolated temperature
compensation (TC) technology provides a typical accu-
racy of 1% across the full operating temperature range
Extremely low noise and high resolution achieved
via proprietary Hall element and low noise amplifier
circuits
120 kHz nominal bandwidth achieved via proprietary
packaging and chopper stabilization techniques
Patented circuits suppress IC output spiking during fast
current step inputs
Open circuit detection on ground pin (broken wire)
Undervoltage lockout for V
CC
below specification
Low Noise, High Precision, Factory-Programmed Linear Hall Effect Sensor IC
With Advanced Temperature Compensation and High Bandwidth (120 kHz) Analog Output
Package: 4-pin SIP (suffix KT)
Functional Block Diagram
Not to scale
A1366
1 mm case thickness
V+
Dynamic Offset
Cancellation
EEPROM and
Control Logic
VCC
GND
VOUT
Signal Recovery
To all subcircuits
C
BYPASS
C
L
Temperature
Sensor
Offset ControlSensitivity Control
Programming
Control
Continued on the next page…
Continued on the next page…
Verzeichnis

A1366LKTTN-1-T Datenblatt-PDF

A1366LKTTN-1-T Datenblatt PDF
Allegro MicroSystems
23 Seiten, 2017 KB
A1366LKTTN-1-T Programmierhandbuch
Allegro MicroSystems
22 Seiten, 972 KB
A1366LKTTN-1-T Anderes Datenblatt
Allegro MicroSystems
22 Seiten, 2168 KB

A1366LKTTN1 Datenblatt-PDF

A1366LKTTN-1-T Datenblatt PDF
Allegro MicroSystems
Hall Effect Sensor 10mA 4.5V to 5.5V 4Pin SIP T/R
A1366LKTTN-10-T Datenblatt PDF
Allegro MicroSystems
Hall Effect Sensor 10mA 4.5V to 5.5V 4Pin SIP T/R
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