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1N4151
1N4151, Rev. A
1N4151
Small Signal Diode
Absolute Maximum Ratings* T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
DO-35
Color Band Denotes Cathode
2004 Fairchild Semiconductor Corporation
Electrical Characteristics T
A
= 25°C unless otherwise noted
*Pulse test : Pulse width=300us, Duty Cycle=2%
Symbol
Parameter
Value
Units
V
RRM
Maximum Repetitive Reverse Voltage 75 V
I
F(AV)
Average Rectified Forward Current 150 mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
0.5
2.0
A
A
T
stg
Storage Temperature Range -65 to +175
°
C
T
J
Operating Junction Temperature 175
°
C
Symbol
Parameter
Value
Units
P
D
Power Dissipation 500 mW
R
θ
JA
Thermal Resistance, Junction to Ambient 300
°
C/W
Symbol
Parameter
Test Conditions
Min
Max
Units
V
R
Breakdown Voltage
I
R
= 5.0
µ
A
75 V
V
F
* Forward Voltage I
F
= 50 mA 1.0 V
I
R
* Reverse Current V
R
= 50 V
V
R
= 50 V, T
A
= 150°C
50
50
nA
µA
C
T
Total Capacitance V
R
= 0 V , f
= 1.0 MHz 2.0 pF
t
rr1
Reverse Recovery Time I
F
= I
R
= 10 mA, I
RR
= 1.0 mA,
R
L
= 100
Ω
4.0 ns
t
rr2
Reverse Recovery Time I
F
= 10 mA, V
R
= 6.0 V,
R
L
= 100
Ω
2.0 ns
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