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MW7IC2725NR1 Anwendungshinweis - Freescale

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MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2725N wideband integrated circuit is designed with on- chip
matching that makes it usable from 2300- 2700 MHz. This multi- stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular
base station modulation formats.
Typical WiMAX Performance: V
DD
= 28 Volts, I
DQ1
= 77 mA, I
DQ2
= 275 mA,
P
out
= 4 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM
3
/
4
,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 28.5 dB
Power Added Efficiency — 17%
Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — -50 dBc in 1 MHz Channel Bandwidth
Driver Applications
Typical WiMAX Performance: V
DD
= 28 Volts, I
DQ1
= 77 mA, I
DQ2
= 275 mA,
P
out
= 26 dBm Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM
3
/
4
,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 27.8 dB
Power Added Efficiency — 3.2%
Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — -56 dBc in 1 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 40 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 5 W CW
P
out
Typical P
out
@ 1 dB Compression Point ] 25 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
On-Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977
or AN1987.
MW7IC2725NR1
MW7IC2725GNR1
MW7IC2725NBR1
2500-2700 MHz, 4 W AVG., 28 V
WiMAX
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886-01
TO-270 WB-16
PLASTIC
MW7IC2725NR1
CASE 1887-01
TO-270 WB-16 GULL
PLASTIC
MW7IC2725GNR1
CASE 1329-09
TO-272 WB-16
PLASTIC
MW7IC2725NBR1
Document Number: MW7IC2725N
Rev. 3, 1/2010
Freescale Semiconductor
Technical Data
Figure 1. Functional Block Diagram
Quiescent Current
Temperature Compensation
(1)
V
DS1
RF
in
V
GS1
RF
out
/V
DS2
V
GS2
V
DS1
(Top View)
Figure 2. Pin Connections
Note: Exposed backside of the package is
the source terminal for the transistors.
GND
NC
RF
in
V
GS1
GND
RF
out
/V
DS2
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
V
GS2
9
10
GND 11
V
DS1
NC
NC
NC
V
DS1
NC
NC
Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
Verzeichnis

MW7IC2725NR1 Datenblatt-PDF

MW7IC2725NR1 Anwendungshinweis
Freescale
24 Seiten, 1042 KB

MW7IC2725 Datenblatt-PDF

MW7IC2725NR1
Datenblatt PDF
NXP
Amplifier,2500 to 2700MHz, 25W, Typ Gain in dB is 28.5 @ 2700MHz, 28V, LDMOS, SOT1726
MW7IC2725NR1
Anwendungshinweis
Freescale
Trans RF MOSFET 65V 17Pin TO-270W T/R
MW7IC2725GNR1
Benutzerreferenzhandbuch
NXP
Amplifier,2500 to 2700MHz, 25W, Typ Gain in dB is 28.5 @ 2700MHz, 28V, LDMOS, SOT1723
MW7IC2725NBR1
Anderes Datenblatt
NXP
Trans RF MOSFET 65V 17Pin TO-272W T/R
MW7IC2725GNR1
Anderes Datenblatt
Freescale
Trans RF MOSFET 65V 17Pin TO-270W GULL T/R
MW7IC2725NBR1
Anwendungshinweis
Freescale
Trans RF MOSFET 65V 17Pin TO-272W T/R
MW7IC2725GN
Benutzerreferenzhandbuch
NXP
WiMAX RF LDMOS Wideband Integrated Power Amplifier, 2500-2700MHz, 4W Avg., 28V
MW7IC2725N
Benutzerreferenzhandbuch
NXP
WiMAX RF LDMOS Wideband Integrated Power Amplifier, 2500-2700MHz, 4W Avg., 28V
MW7IC2725GNR1
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