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RTE002P02
Transistors
1/2
2.5V Drive
Pch
MOS FET
RTE002P02
zStructure zExternal dimensions (Unit : mm)
Silicon P-channel MOS FET
zFeatures
1) Low On-resistance.
2) Small package (EMT3).
3) 2.5V drive.
zApplications
(1)Source
(2)Gate
ain
EMT3
Switching
zPackage specifications zInner circuit
Package
Code
Taping
Basic ordering unit (pieces)
RTE002P02
TL
3000
Type
zAbsolute maximum ratings (Ta=25°C)
∗1
Parameter
VV
DSS
Symbol
VV
GSS
AI
D
AI
DP
Limits Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
−20
±12
±0.2
±0.4
∗2
W
P
D
°CTch
°CTstg
Total power dissipation
Channel temperature
Range of storage temperature
150
−55 to +150
0.15
zThermal resistance
Parameter
°C/W
Rth(ch-a)
Symbol Limits Unit
Channel to ambient
833
∗ Each terminal mounted on a recommended land
∗
(1) Source
(2) Gate
(3) Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2
∗1
(3)
(2)
(1)
(3)Dr
1.6
0.7
0.15
0.1Min.
0.55
0.2
1.6
1.0
0.3
0.8
(
2
)
0.5
0.5
(
3
)
0.2
(
1
)
Abbreviated symbol : TW
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