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STBR3012G2-TR Anwendungshinweis - ST Microelectronics

  • Hersteller:
    ST Microelectronics
  • Fallpaket
    D2PAK
  • Beschreibung:
    Diode 1.2KV 30A 3-Pin(2+Tab) H2PAK T/R
Aktualisierte Uhrzeit: 2025-06-08 15:41:16 (UTC+8)

STBR3012G2-TR Anwendungshinweis

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November 2016
DocID029963 Rev 1
1/8
This is information on a product in full production.
www.st.com
STBR3012
High voltage rectifier for bridge applications
Datasheet - production data
Features
Ultra-low conduction losses
Ultra-low reverse losses
High junction temperature capability
ECOPACK
®
2 compliant component
Description
The high quality design of this diode results in a
device with consistently reproducible
characteristics and intrinsic ruggedness. These
characteristics make it ideal for heavy duty
applications that demand long term reliability.
Thanks to its ultra-low conduction losses, this
diode is especially suitable for use as input
bridge diode.
Table 1: Device summary
Symbol
I
F(AV)
30 A
V
RRM
1200 V
V
F
(typ.)
0.95 V
T
j
(max.)
175 °C
K
A
DO-247
A
K

STBR3012G2-TR Datenblatt-PDF

STBR3012G2-TR Anwendungshinweis
ST Microelectronics
8 Seiten, 298 KB

STBR3012G2 Datenblatt-PDF

STBR3012G2Y-TR
Anwendungshinweis
ST Microelectronics
DFD RECTIFIER
STBR3012G2-TR
Anwendungshinweis
ST Microelectronics
Diode 1.2KV 30A 3-Pin(2+Tab) H2PAK T/R
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