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CY7C1346H-166AXC Benutzerreferenzhandbuch - Cypress Semiconductor

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CY7C1346H-166AXC Benutzerreferenzhandbuch

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2-Mbit (64K x 36) Pipelined Sync SRAM
CY7C1346H
Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600
Document #: 38-05672 Rev. *C Revised March 20, 2010
Features
Registered inputs and outputs for pipelined operation
64K × 36 common I/O architecture
3.3V core power supply
3.3V/2.5V I/O operation
Fast clock-to-output times
3.5 ns (166-MHz device)
Provide high-performance 3-1-1-1 access rate
User-selectable burst counter supporting Intel
!
Pentium
interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed writes
Asynchronous output enable
Offered in JEDEC-standard lead-free 100-pin TQFP
package
“ZZ” Sleep Mode Option
Functional Description
[1]
The CY7C1346H SRAM integrates 64K x 36 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(
CE
1
), depth-expansion Chip Enables (CE
2
and
CE
3
), Burst
Control inputs (
ADSC
,
ADSP
,
and
ADV
), Write Enables
(
BW
[A:D]
, and
BWE
), and Global Write (
GW
). Asynchronous
inputs include the Output Enable (
OE
) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (
ADSP
) or
Address Strobe Controller (
ADSC
) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (
ADV
).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to four bytes wide as
controlled by the Byte Write control inputs.
GW
when active
LOW
causes all bytes to be written.
The CY7C1346H operates from a +3.3V core power supply
while all outputs also operate with either a +3.3V/2.5V supply.
All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Logic Block Diagram
ADDRESS
REGISTER
ADV
CLK
BURST
COUNTER
AND
LOGIC
CLR
Q1
Q0
ADSP
ADSC
MODE
BWE
GW
CE
1
CE
2
CE
3
OE
ENABLE
REGISTER
OUTPUT
REGISTERS
SENSE
AMPS
OUTPUT
BUFFERS
E
PIPELINED
ENABLE
INPUT
REGISTERS
A
0, A1, A
BW
B
BW
C
BW
D
BW
A
MEMORY
ARRAY
SLEEP
CONTROL
ZZ
A
[1:0]
2
DQA ,DQPA
BYTE
WRITE REGISTER
DQ
B,DQPB
BYTE
WRITE REGISTER
DQ
C,DQPC
BYTE
WRITE REGISTER
DQ
D,DQD
BYTE
WRITE REGISTER
DQ
A,DQPA
BYTE
WRITE DRIVER
DQ
B,DQPB
BYTE
WRITE DRIVER
DQ
C ,DQPC
BYTE
WRITE DRIVER
DQ
D ,DQP
D
BYTE
WRITE DRIVER
DQPA
DQPB
DQPC
DQPD
DQs
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CY7C1346H-166AXC Datenblatt-PDF

CY7C1346H-166AXC Benutzerreferenzhandbuch
Cypress Semiconductor
16 Seiten, 519 KB
CY7C1346H-166AXC Anderes Datenblatt
Cypress Semiconductor
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CY7C1346H-166AXC Eigenschaften Beschreibung Parameter
Cypress Semiconductor
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CY7C1346H166 Datenblatt-PDF

CY7C1346H-166AXC Benutzerreferenzhandbuch
Cypress Semiconductor
SRAM Chip Sync Quad 3.3V 2M-Bit 64K x 36 3.5ns 100Pin TQFP Tray
CY7C1346H-166AXCT Benutzerreferenzhandbuch
Cypress Semiconductor
SRAM Chip Sync Quad 3.3V 2M-Bit 64K x 36 3.5ns 100Pin TQFP T/R
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