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Leadership in wireless communications
Expanded—Freescale’s GaAs
Solutions Portfolio
Leveraging our extensive GaAs capabilities
and a near half century of RF power device
experience, Freescale has developed both a
broad general purpose amplifier (GPA)
portfolio and an extensive selection of MMIC
devices. This portfolio offers amplifier devices
with P1dB from 15 to 33 dBm and low noise
amplifiers (LNA) with noise figures below
0.5 dB.
Freescale’s GaAs MMIC portfolio offers
products utilizing enhancement mode pHEMT
(E-pHEMT), HFET and InGaP HBT device
technologies. The E-pHEMT and HFET
devices offer higher OIP3 relative to HBT
devices biased at the same current. This
enables system designers to achieve
excellent linearity with lower power
consumption. The E-pHEMT devices offer
superior noise figure in conjunction with
excellent linearity at reduced biased currents,
relative to standard low-voltage InGaP HBT
technology. All products offer single positive
supply operation.
With the expansion of the GaAs MMIC
portfolio, Freescale is well positioned to offer
designers a complete lineup for low- to
medium-power applications and components
suitable for the receive or transmit side of the
radio communications system.
Complementing Freescale’s expanded GaAs
portfolio is our outstanding world-class global
sales and applications support. Our
infrastructure products group allows for a
consolidated supply chain, creating simplified
procurement logistics and additional cost
saving for the customer. Plus, Freescale
customers can order with confidence, as our
manufacturing capabilities and robust quality
systems ensure a stable and secure product
supply.
RF MMIC
GaAs Solutions
Advantages
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voltages and regulators—no external
resistors are required
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HBT devices with integrated thermal
compensation schemes greatly reduce
performance variation over temperature
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results in devices with extremely low
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performance characteristics
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technologies, including InGaP HBT,
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MMIC technology
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support
Verzeichnis
- ・ Blockdiagramm on Seite 4
- ・ Anwendungsbereich on Seite 2 Seite 3
