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MRFE6VP61K25H MRFE6VP61K25HS 2 Meter Amateur
1
RF Reference Design Data
Freescale Semiconductor
RF Power Reference Design Library
2 Meter Amateur Reference Design
High Ruggedness N--Channel Enhancement--Mode
Lateral MOSFETs
Reference Design Characteristics
This document describes a high efficiency, rugged linear amplifier reference
design for 2 meter amateur band (144 MHz -- 148 MHz) operation. Because of
the ruggedness and low thermal resistance of the MRFE6VP61K25H transistor
used in the design. the design can output high power even when operating into
high VSWR. The amplifier can be biased for Class AB linear or Class C
operation and is suitable for both analog and digital waveforms (AM/SSB or
WSJT/FM/CW).
Frequency Band: 144--148 MHz
Output Power: >1250 Watts CW
Supply Voltage: 50 Vdc
Power Gain (Typ): 26 dB
Class C Drain Efficiency (Min): >78%
IMD @ 1 kW Output: < --28.5 dB
The MRFE6VP61K25H transistor used in this design is one of the devices in
Freescale’s RF power enhanced ruggedness 50 volt LDMOS product line. These
devices, including the 600 watt MRFE6VP5600H and the 300 watt
MRFE6VP6300H, are all specifically designed for 50 volt operation under harsh
conditions.
2 METER AMATEUR REFERENCE DESIGN
This reference design is designed to demonstrate the RF
performance characteristics of the MRFE6VP61K25H/HS
devices operating in 144--148 MHz amateur radio band. The
reference design shows two operational modes with different
optimizations, V
DD
=50volts,I
DQ
= 2500 mA for Class AB
linear operation or V
DD
=43volts,I
DQ
=200mAforClassC
operation.
REFERENCE DESIGN LIBRARY TERMS
AND CONDITIONS
Freescale is pleased to make this reference design
available for your use in development and testing of your
own product or products. The reference design contains an
easy--to--copy, fully functional amplifier design. It consists of
“no tune” distributed element matching circuits designed to
be as small as possible, and is designed to be used as a
“building block” by our customers.
HEATSINKING
When operating this fixture it is critical that adequate
heatsinking is provided for the device. Excessive heating of
the device may prevent duplication of the included
measurements and/or destruction of the device.
Available at http://freescale.com/RFindustrial > Design Support > Reference Designs or
http://freescale.com/RFbroadcast
> Design Support > Reference Designs
Rev. 0, 6/201 1
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2011.
A
ll rights reserved.
MRFE6VP61K25H
MRFE6VP61K25HS
2 Meter Amateur
144--148 MHz, 1250 W CW, 50 V
2 METER AMATEUR
REFERENCE DESIGN
RF
OUTPUT
RF
INPUT
M
V
DD
V
GG
BIAS
-
+
+
-
V
DD
V
GG
M
M
M
BIAS
BIAS
BIAS
M=Match
Figure 1. 2 Meter Amateur Reference Design Fixture
Verzeichnis
- ・ Blockdiagramm on Seite 3
- ・ Technische Daten on Seite 1
