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STD11N60M2-EP Anwendungshinweis - ST Microelectronics

  • Hersteller:
    ST Microelectronics
  • Kategorie:
    MOSFET, MOSFET Transistor
  • Fallpaket
    TO-252-3
  • Beschreibung:
    Trans MOSFET N-CH 600V 7.5A 3Pin(2+Tab) DPAK T/R
Aktualisierte Uhrzeit: 2025-06-17 11:13:30 (UTC+8)

STD11N60M2-EP Anwendungshinweis

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March 2015 DocID025567 Rev 1 1/27
27
AN4406
Application note
MDmesh™ M2:
the new ST super-junction technology ideal for resonant topologies
Antonino Gaito, Giovanni Ardita, Cristiano Gianluca Stella
Introduction
Today, power supply designers are facing a new and exciting challenge: the necessity to
increase power density and efficient thermal management. A response to this challenge has
been found in resonant topologies that typically employ the LLC resonant converter.
In this topology, the parasitic capacitances of the MOSFETs can impact system behavior by
increasing switching losses and decreasing efficiency.
This application note provides the results of experimental performance analysis of the two
latest and most advanced ST MOSFET super-junction technologies, MDmesh™ M2 and
MDmesh™ M5, and compares them with well-known competitor devices in relation to
MOSFET parasitic capacitance.
www.st.com

STD11N60M2-EP Datenblatt-PDF

STD11N60M2-EP Benutzerreferenzhandbuch
ST Microelectronics
60 Seiten, 4456 KB
STD11N60M2-EP Diagramme zeichnen
ST Microelectronics
15 Seiten, 773 KB
STD11N60M2-EP Anwendungshinweis
ST Microelectronics
27 Seiten, 653 KB
STD11N60M2-EP Verpackung
ST Microelectronics
17 Seiten, 370 KB

STD11N60M2 Datenblatt-PDF

STD11N60M2-EP
Benutzerreferenzhandbuch
ST Microelectronics
Trans MOSFET N-CH 600V 7.5A 3Pin(2+Tab) DPAK T/R
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